| PART |
Description |
Maker |
| RJK03C5DPA-00-J5A RJK03C5DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P6DPA RJK03P6DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH5826 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| PT2390 PT2390-S |
Echo IC with Built in Michrophone Amplifier and Output Mixer
Echo IC with Built-in Microphone Amplifier & Output Mixer
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
|
Princeton Technology Co...
Princeton Technology Corporation
PTC
|
| SMA4032 |
3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
SANKEN[Sanken electric]
|
| TDA7563 E-TDA7563 |
46 W, 4 CHANNEL, AUDIO AMPLIFIER, PZFM27
MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES
|
STMICROELECTRONICS
意法半导
ST Microelectronics
|
